1n5059, 1N5060, 1n5061, 1n5062 www.vishay.com vishay semiconductors rev. 1.7, 12-sep-12 1 document number: 86000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 standard avalanche sinterglass diode mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed axial-leaded glass envelope ? controlled avalanche characteristics ? low reverse current ? high surge current loading ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? rectification diod e, general purpose 949539 ordering information (example) device name ordering code tape d units minimum order quantity 1n5062 1n5062tr 5000 per 10" tape and reel 25 000 1n5062 1n5062tap 5000 per ammopack 25 000 parts table part type differentiation package 1n5059 v r = 200 v; i f(av) = 2 a sod-57 1N5060 v r = 400 v; i f(av) = 2 a sod-57 1n5061 v r = 600 v; i f(av) = 2 a sod-57 1n5062 v r = 800 v; i f(av) = 2 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics 1n5059 v r = v rrm 200 v 1N5060 v r = v rrm 400 v 1n5061 v r = v rrm 600 v 1n5062 v r = v rrm 800 v peak forward surge current t p = 10 ms, half sine wave i fsm 50 a average forward current t thja = 45 k/w, t amb = 50 c i f(av) 2a t thja = 100 k/w, t amb = 75 c i f(av) 0.8 a pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, inductive load e r 20 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w
1n5059, 1N5060, 1n5061, 1n5062 www.vishay.com vishay semiconductors rev. 1.7, 12-sep-12 2 document number: 86000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 ? c, unless otherwise specified) fig. 1 - max. reverse power dissipation vs. junction temperature fig. 2 - max. reverse curr ent vs. junction temperature fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. forward current vs. forward voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max unit forward voltage i f = 1 a v f --1v i f = 2.5 a v f - - 1.15 v reverse current v r = v rrm i r --1a v r = v rrm , t j = 100 c i r - - 10 a v r = v rrm , t j = 150 c i r - - 100 a breakdown voltage i r = 100 a 1n5059 v (br)r 225 - 1600 v 1N5060 v (br)r 450 - 1600 v 1n5061 v (br)r 650 - 1600 v 1n5062 v (br)r 900 - 1600 v diode capacitance v r = 0 v, f = 1 mhz c d -40-pf reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr --4s 0 40 80 120 160 200 25 50 75 100 125 150 175 t j - junction temperature ( c) 15764 v r =v rrm p - reverse power dissipation ( mw ) r 160 k/w 100 k/w 45 k/w r thja = 1n5062 1n5061 1N5060 1n5059 0.1 1 10 100 1000 15765 v r =v rrm i - reverse current ( a) r 25 50 75 100 125 150 175 t j - junction temperature ( c) 15763_1 v r =v rrm half sinewave r thja =4 5 k/w l =10 mm r thja = 100 k/w pcb :d=2 5m m 02 04 06 08 0 100 120 140 160 180 t amb - ambient t emperature (c) 0.0 1.0 1.5 2.0 2.5 3.0 i- average forward current (a) fa v 0.5 i - forward current ( a ) 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v f - forward voltag e(v) 15762 f t j =25 c t j =175 c 0.01 0.1 1 10 100 0.001
1n5059, 1N5060, 1n5061, 1n5062 www.vishay.com vishay semiconductors rev. 1.7, 12-sep-12 3 document number: 86000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 10 20 30 40 50 0.1 1 10 100 v r -reversevoltage(v) 15766 c - diode capacitance ( pf ) d f=1mhz 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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